Influence of strain on the band gap energy of wurtzite InN
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Abstract
Degenerate wurtzite InN films with electron concentrations in the range of 1018 cm-3 were studied by using spectroscopic ellipsometry (SE) in two spectral ranges. The analysis of the frequencies of the coupled phonon-plasmon modes in the mid-infrared region allows the determination of the plasma frequency and thus of the carrier density in the bulk of the samples. SE from the near-infrared to the visible range provides the dielectric function (DF) around the absorption edge. The electron concentration as an important input parameter enables accurate determination of Burstein-Moss shift and band-gap renormalization for the analysis of the imaginary part of the DF. Taking into account the in-plane strain of the films, which is caused by lattice mismatch between InN and buffer/substrate, we obtain a zero-density strain-free band gap of 0.675 eV at room temperature.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of strain on the band gap energy of wurtzite InN</title><author><name sortKey="Schley, P" uniqKey="Schley P">P. Schley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Technical University Ilmenau, PF 100565</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>100565</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Goldhahn, R" uniqKey="Goldhahn R">R. Goldhahn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Technical University Ilmenau, PF 100565</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>100565</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Gobsch, G" uniqKey="Gobsch G">G. Gobsch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Technical University Ilmenau, PF 100565</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>100565</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Feneberg, M" uniqKey="Feneberg M">M. Feneberg</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, University of Ulm</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Thonke, K" uniqKey="Thonke K">K. Thonke</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, University of Ulm</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Wang, X" uniqKey="Wang X">X. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronics and Mechanical Engineering, Chiba University, 1-33Yayoi-cho</s1><s2>Inage-ku, Chiba 263-8522</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Inage-ku, Chiba 263-8522</wicri:noRegion></affiliation></author><author><name sortKey="Yoshikawa, A" uniqKey="Yoshikawa A">A. Yoshikawa</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronics and Mechanical Engineering, Chiba University, 1-33Yayoi-cho</s1><s2>Inage-ku, Chiba 263-8522</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Inage-ku, Chiba 263-8522</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0335984</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0335984 INIST</idno><idno type="RBID">Pascal:09-0335984</idno><idno type="wicri:Area/Main/Corpus">005301</idno><idno type="wicri:Area/Main/Repository">005152</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption edge</term><term>Burstein Moss effect</term><term>Carrier density</term><term>Dielectric function</term><term>Energy gap</term><term>Indium nitride</term><term>Mismatch lattice</term><term>Phonon-plasmon interactions</term><term>Spectroscopic ellipsometry</term><term>Strained layer</term><term>Stress effects</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet contrainte</term><term>Bande interdite</term><term>Accommodation réseau</term><term>Densité porteur charge</term><term>Ellipsométrie spectroscopique</term><term>Interaction phonon plasmon</term><term>Fonction diélectrique</term><term>Limite absorption</term><term>Effet de Burstein Moss</term><term>Nitrure d'indium</term><term>Couche contrainte</term><term>InN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Degenerate wurtzite InN films with electron concentrations in the range of 10<sup>18</sup> cm<sup>-3</sup> were studied by using spectroscopic ellipsometry (SE) in two spectral ranges. The analysis of the frequencies of the coupled phonon-plasmon modes in the mid-infrared region allows the determination of the plasma frequency and thus of the carrier density in the bulk of the samples. SE from the near-infrared to the visible range provides the dielectric function (DF) around the absorption edge. The electron concentration as an important input parameter enables accurate determination of Burstein-Moss shift and band-gap renormalization for the analysis of the imaginary part of the DF. Taking into account the in-plane strain of the films, which is caused by lattice mismatch between InN and buffer/substrate, we obtain a zero-density strain-free band gap of 0.675 eV at room temperature.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>246</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of strain on the band gap energy of wurtzite InN</s1></fA08><fA11 i1="01" i2="1"><s1>SCHLEY (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>GOLDHAHN (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>GOBSCH (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>FENEBERG (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>THONKE (K.)</s1></fA11><fA11 i1="06" i2="1"><s1>WANG (X.)</s1></fA11><fA11 i1="07" i2="1"><s1>YOSHIKAWA (A.)</s1></fA11><fA14 i1="01"><s1>Institute of Physics, Technical University Ilmenau, PF 100565</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Semiconductor Physics, University of Ulm</s1><s2>89069 Ulm</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronics and Mechanical Engineering, Chiba University, 1-33Yayoi-cho</s1><s2>Inage-ku, Chiba 263-8522</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>1177-1180</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000188242770040</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0335984</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Degenerate wurtzite InN films with electron concentrations in the range of 10<sup>18</sup> cm<sup>-3</sup> were studied by using spectroscopic ellipsometry (SE) in two spectral ranges. The analysis of the frequencies of the coupled phonon-plasmon modes in the mid-infrared region allows the determination of the plasma frequency and thus of the carrier density in the bulk of the samples. SE from the near-infrared to the visible range provides the dielectric function (DF) around the absorption edge. The electron concentration as an important input parameter enables accurate determination of Burstein-Moss shift and band-gap renormalization for the analysis of the imaginary part of the DF. Taking into account the in-plane strain of the films, which is caused by lattice mismatch between InN and buffer/substrate, we obtain a zero-density strain-free band gap of 0.675 eV at room temperature.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet contrainte</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Stress effects</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Bande interdite</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Energy gap</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Accommodation réseau</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Mismatch lattice</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Acomodación red</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Carrier density</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Ellipsométrie spectroscopique</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Spectroscopic ellipsometry</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Elipsometría espectroscópica</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Interaction phonon plasmon</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Phonon-plasmon interactions</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Fonction diélectrique</s0><s5>11</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Dielectric function</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Limite absorption</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Absorption edge</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Effet de Burstein Moss</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Burstein Moss effect</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Efecto Burstein Moss</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Couche contrainte</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Strained layer</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Capa forzada</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>243</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Workshop on Nitride Semiconductors (IWN 2008)</s1><s3>Montreux CHE</s3><s4>2008-10-06</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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